| Title |
Theory and Analysis of Kink Effect in Body Contacted PD-SOI nMOSFETs |
| Authors |
이기안(Kiahn Lee) ; 이성현(Seonghearn Lee) |
| DOI |
https://doi.org/10.5573/ieie.2019.56.11.15 |
| Keywords |
Kink effect ; PD-SOI ; SOI MOSFET ; Body contact ; Parasitic BJT ; |
| Abstract |
We have physically analyzed the kink effect of high resistivity (HR) partially depleted (PD) silicon-on-insulator (SOI) nMOSFETs with body contact compared with floating body device, and investigated its geometry-dependent phenomenon. First, the kink effect that the channel and collector currents are increased at high drain voltage is physically analyzed using an equivalent circuit including impact-ionization hole current source, parasitic BJT, and grounded body resistance, and the cause of the large decrease of current increasing rate at the turn-on voltage of emitter junction is identified. These physical analysis results are experimentally verified by measuring the drain current with increasing the external body voltage. In BCT PD-SOI nMOSFETs, the geometry-dependent kink effect that the drain voltage at which kink current starts decreases as W/L increases is analyzed by physical equations. |