| Title |
Design of Traveling-Wave Concept W-band SPST Switch on GaN 100-nm Process |
| Authors |
강재홍(Jae-Hong Kang) ; 이석희(Suk-Hui Lee) ; 안광호(Kwang-Ho Ahn) ; 김완식(Wansik Kim) ; 정주용(Jooyong Jung) ; 이주영(Juyoung Lee) ; 김종필(Mihui Seo) ; 서미희(Sosu Kim) ; 김소수(Ki-Jin Kim) ; 김기진() |
| DOI |
https://doi.org/10.5573/ieie.2020.57.1.22 |
| Keywords |
GaN ; W-band ; MMIC ; Switch ; Traveling-Wave ; |
| Abstract |
This paper reports a design of traveling-wave concept w-band single-pole single-throw(SPST) switch. In order to use the switch transistor provided in the commercial GaN 100-nm process in the W-band, a simple circuit structure is proposed to compensate for parasitic components generated at high frequency by using a series capacitor. A measured insertion loss is under 2.564 dB from 75 GHz to 110 GHz. A measured isolation is over 10 dB from 78.7 GHz to 110 GHz, over 20 dB from 88.5 GHz to 110 GHz and over 30 dB form 96.8 GHz to 110 GHz. A measured S11 and S22 is under -11.068 dB from 75 GHz to 110 GHz. |