| Title |
Improvement of Self-heating Effect and Retention Characteristics in HfO2-Based Nonvolatile Memory For NOR Flash By Utilizing Sapphire Substrate |
| Authors |
송영서(Young Suh Song) ; 김현우(Hyunwoo Kim) |
| DOI |
https://doi.org/10.5573/ieie.2020.57.9.29 |
| Keywords |
노어 플래시; 자기가열효과; 보존성; 하프늄 옥사이드; 비휘발성 메모리 |
| Abstract |
In this paper, in designing improved HfO2(Hafnium oxide) based nonvolatile memory for NOR Flash application, SOS(Silicon On Sapphire) based TAHOS(TaN/Al2O3/HfO2/SiO2/Si) structure is proposed as substitutable candidate for replacing conventional SOI(Silicon On Insulator) based TAHOS structure. By utilizing the magnificent thermal conductivity of sapphire(Al2O3) materials, we tried to improve self-heating effect and retention issue that the TAHOS structure has suffered. In the case of proposed SOS based TAHOS structure, it has been demonstrated that self-heating effect can be significantly improved since the sapphire material effectively acts as a heat sink. Furthermore, it has been shown that this suppression of self-heating effect can suppresses the electrons in charge trap layer (CTL) from obtaining thermal energy, thereby retention characteristic can be improved. |