| Title |
Drain Voltage Dependence Analysis of RF Inductive Effect in Body Contacted High Resistivity PD-SOI N-MOSFETs |
| Authors |
이기안(Kiahn Lee) ; 이성현(Seonghearn Lee) |
| DOI |
https://doi.org/10.5573/ieie.2021.58.2.17 |
| Keywords |
RF inductive effect; RF SCBE; SOI CMOS; PD-SOI MOSFET; modeling |
| Abstract |
The voltage-dependent characteristics of the RF inductive effect occurring in high-frequency and -parameters due to the substrate current-induced body effect (SCBE) generated in body contacted(BCT) high resistivity(HR) partially depleted(PD) silicon-on-insulator(SOI) nMOSFETs with high gate aspect ratio are physically analyzed using the frequency-dependent admittance equation of a SCBE equivalent circuit. After this inductive effect is modeled as a simple parallel RLC resonance circuit instead of the complicated SCBE model simulating the output negative capacitance, the drain voltage-dependent characteristics of the SCBE resistance, inductance and resonance frequency are extracted and verified by a small-signal equivalent circuit. |