| Title |
Investigation of the Characteristics of High-Power E-mode GaN Power Semiconductor by Plasma Process |
| Authors |
최환히찬(Hwan-Hee-Chan Choi) ; 안결(Gyeol Ahn) ; 장태훈(Taehoon Jang) ; 심규환(Kyu-Hwan Shim) |
| DOI |
https://doi.org/10.5573/ieie.2021.58.3.43 |
| Keywords |
Plasma process; E-mode GaN; HEMT; ICP; etch |
| Abstract |
This paper explains the characteristics of high-power E-mode GaN power semiconductor according to plasma process. When the AlGaN/GaN epi. structure is fixed, the only way to improve the output performance of the E-mode GaN device is to minimize the resistance of ohmic contact. There is a method of lowering resistance through ohmic metal and thermal process, but a damage layer between ohmic metal and AlGaN epi. layer formed by plasma process in the process of selectively etching p-GaN increases resistance. In addition, remaining p-GaN layer may increase the resistance after thermal process. In this paper, it was confirmed that the characteristics of the E-mode GaN power semiconductor are improved when the p-GaN layer is etched by reducing the ICP power and by changing the remaining p-GaN layer after etching. |