| Title |
Improved RF Method to Extract Extrinsic Capacitances in PD-SOI MOSFETs |
| Authors |
국진욱(Jinwook Kuk) ; 이성현(Seonghearn Lee) |
| DOI |
https://doi.org/10.5573/ieie.2021.58.4.3 |
| Keywords |
PD-SOI MOSFET; RF; Capacitance; Parameter extraction; Modeling; Equivalent circuit |
| Abstract |
The inaccuracy of the conventional method for extracting extrinsic capacitances in the accumulation region of high resistivity(HR) partially depleted(PD) silicon-on-insulator(SOI) MOSFETs is confirmed. In order to remove the inaccuracy, we have used a physical off-state equivalent circuit considering internal body resistance which was previously omitted. In order to extract the capacitances of this circuit directly, an improved RF extraction method is proposed by deriving Y-parameter equations from an off-state equivalent circuit simplified in the accumulation region. The accuracy of the improved method is verified by comparing modeled S-parameters of the physical equivalent circuit with measured ones up to 30GHz. |