| Title |
The Change of Self-heating according to Bottom Oxide and Package which are based on 3nm Multi-nanosheet Field Effect Transistor |
| Authors |
유창현(Changhyun Yoo) ; 김현우(Hyunwoo Kim) ; 선윤근(Yoongeun Seon) ; 강명곤(Myounggon Kang) ; 전종욱(Jongwook Jeon) |
| DOI |
https://doi.org/10.5573/ieie.2021.58.4.9 |
| Keywords |
Multi-nanosheet field effect transistor(NSFET); Self-heating effect(SHE); Thermal boundary condition |
| Abstract |
As semiconductor devices are continuously miniaturized, heat generation per unit area is increasing. In addition, recently used FinFET structures or Gate-All-Around(GAA) structures such as nanosheets make it more difficult to dissipate heat generated in the channel compared to conventional planar MOSFETs. Therefore, many studies have been conducted on self-heating phenomenon in 3D semiconductor device structure. In this study, research was conducted by changing various process options in lateral multi-nanosheet FET, which is expected tobe used in technology nodes below 3nm. While most of the previous self-heating studies were on the internal process option of the device FEOL, in this study, the self-heating effect by the package type, BEOL dielectric material, and device bottom isolation dielectric was studied. For this study, 3D TCAD software was used, and the thermal boundary according to the package type published in the previous paper[7] was considered. As a result of the analysis, it was confirmed that the bottom oxide prevented theheat generated from the nanosheet channel from being lost to the bottom substrate, thereby increasing the maximum temperature increase(△Tmax) value due to self-heating in the channel. It has been confirmed that when the packaging type is face-down and the higher the thermal conductivity of the dielectric material, the lower the degree of Rth and △Tmax. |