| Title |
Effect of Radiation Displacement Defect on Superjunction MOSFET using TCAD Simulation |
| Authors |
이경엽(Gyeongyeop Lee) ; 김정식(Jungsik Kim) |
| DOI |
https://doi.org/10.5573/ieie.2021.58.8.49 |
| Keywords |
Radiation effect; Superjunction MOSFET; Displacement defect; TCAD simulation |
| Abstract |
The effect of displacement defect due to radiation effect on Super-junction metal-oxide-semiconductor field effect transistor (SJ-MOSFET) is studied based on technology computer aided design (TCAD) simulation. An Acceptor-like trap of level With shows the most significant degradation, compared with acceptor-like trap with and Donor-like trap with . The worst position of displacement defect is the central of N-pillar, because the central of N-pillar is the main current path. The displacement defect with Acceptor-like trap of deep level () at central of N-pillar induces the worst degradation of Id-Vg characteristic. For the breakdown voltage characteristic, the trap is negligible because abudant electron-hole pairs are generated by impact ionization. |