| Title |
Cell Count Sensor using Graphene FET |
| Authors |
조다애(Da Ae Jo) ; 송광섭(Kwang Soup Song) |
| DOI |
https://doi.org/10.5573/ieie.2021.58.10.71 |
| Keywords |
Cell; number of cells; graphene; field effect transistor; Dirac point; current-voltage characteristics |
| Abstract |
We fabricated solution-gated field-effect transistor on the graphene sheet (G-SGFET) transferred on the polyethylene terephthalate (PET) substrate to detect cell count in electrolyte solution. The cells were dropped on the gate channel surface of G-SGFET, and cell adhesion was induced in an incubator at 37℃ and 5% CO2 condition. In order to observe the change in current-voltage characteristics according to cell adhesion, the drain-source current (IDS) and gate-source voltage (VGS) of the G-SGFET was measured and compared with the characteristics before cell adhesion to the gate channel surface. The Dirac point voltage (VDirac) of G-SGFET shifted to the left direction (0.29 mV/cell) due to cell adhesion on the gate channel surface. |