| Title |
Theoretical Study on a Neuristor Mimicking Generation of Action Potentials of Neuron using Trap-charge in Semiconductor |
| DOI |
https://doi.org/10.5573/ieie.2021.58.11.29 |
| Keywords |
Neuron; Neuromorphic devices; Neuristor; Semiconductor traps; Impact ionization |
| Abstract |
This paper is regarding to a semiconductor neuristor characterized by mimicking the generation of the action potentials of neuron, especially to the analytical model to describe the generation of the neuron-like current pulses. In this model the mathematical expressions were derived to express the generation of current pulses under a bias voltage by analyzing the time variation of space charge produced by impact ionization of electrons on traps in semiconductor and the time variation of the injection current caused by the space-charge-induced electric field at the contact. According to simulation, it was identified that the neuristor operating with the bias voltage of 2 V can be realized by doping the deep impurities such as O or Fe into silicon with the trap energy of 0.5 eV and the density of 1017 cm-3, together with the Schottky contact such as Ni or Sb having the barrier energy of 0.5 eV to Si semiconductor. The neuristor can be considered as a core device for neuromorphic computer. |