| Title |
Channel Stacked Three-dimensional AND-type Synapse Array based on Charge Trap Flash Memory and Operation Methods |
| Authors |
김정남(Jung Nam Kim) ; 김윤(Yoon Kim) |
| DOI |
https://doi.org/10.5573/ieie.2022.59.1.97 |
| Keywords |
Neuromorphic system; Synpase array; Charge-trap flash |
| Abstract |
In this work, we proposed a channel stacked three-dimensional (3-D) AND-type synapse array based on charge-trap flash (CTF) memory with a layer select circuit which provides layer specific operation of synapse array. In addition, we proposed Fowler-Nordheim (FN) tunneling based operation methods of synapse array and layer select circuit. We performed technology computer-aided design (TCAD) device simulation considering the 3-D structure of the synapse array and layer select circuit to verify any disturbance while modulating synaptic weight. We demonstrated the feasibility of the operation methods of 3-D AND-type synapse array which are proposed in this work. |