| Title |
SPICE Modeling of HR PD-SOI MOSFET for RF Switch Applications |
| Authors |
국진욱(Jinwook Kuk) ; 이성현(Seonghearn Lee) |
| DOI |
https://doi.org/10.5573/ieie.2022.59.2.29 |
| Keywords |
MOSFET; SOI MOSFET; RF; SOI; Parameter extraction; Modeling; SPICE model; Equivalent circuit |
| Abstract |
The improved RF macro model of PD-SOI MOSFET for switch applications is developed by adding substrate and buried oxide components in a macro form to the conventional bulk CMOS PSP model mainly used for RF switch IC design. The model parameters are directly extracted from the measured S-parameters using simple Y-parameter equations derived from a common source-body small-signal equivalent circuit, and this is much more physical extraction method compared to the conventional S-parameter optimization one. Finally, the improved SPICE macro model of PD-SOI MOSFETs for switch is constructed by expressing the geometry-dependent characteristics of the extracted model parameters in a form of scalable equation, and the model accuracy is verified through the comparison with the measured S-parameters. |