| Title |
Overview of GAAFET Process Flow and Key Modules |
| Authors |
김규리(Kyu Ree Kim) ; 김형진(Hyungjin Kim) |
| DOI |
https://doi.org/10.5573/ieie.2022.59.4.21 |
| Keywords |
GAAFET(Gate-All-Around Field-Effect Transistor); Process flow; SiGe selective etch |
| Abstract |
Semiconductor devices have been scaled down to enhance both chip density and electrical performances in the semiconductor industry over decades. As a tri-gate structure based on fin channel has reached its physical limitation to control short-channel effects under 3 nm technology, gate-all-round field-effect transistor (GAAFET) in which Si channel is surrounded by gate electrode is being widely investigated since GAAFET has a better gate controllability thanks to its structure and have a granularity through more device parameters including the number of channels, width, and thickness. In this work, we review overall process flow of GAAFET with multilayer nanosheet channel and key process modules including SiGe selective etch. |