| Title |
Design of GaN Low Noise Amplifier MMIC for 28 GHz Band 5G FR2 Communication for Base Station |
| Authors |
안현배(Hyunbae Ahn) ; 지홍구(Hong-Gu Ji) ; 강동민(Dongmin Kang) ; 한정환(Junghwan Han) |
| DOI |
https://doi.org/10.5573/ieie.2022.59.5.77 |
| Keywords |
GaN HEMT; LNA; NF; MMIC; 5G |
| Abstract |
This paper is a study on the design of a two-stage low noise amplifier(LNA) monolithic microwave integrated circuit(MMIC) based on a gallium nitride(GaN) high electron mobility transistor(HEMT) that can be used at the 28 GHz frequency band base station for 5th generation mobile communication(5G) frequency range 2(FR2) communication. The designed LNA based on GaN HEMT uses a bias line serving as a RF Choke as a part of the impedance matching circuit and reduces the chip size by using parallel capacitors instead of open stubs when designing the matching circuits. In this paper, the designed GaN LNA MMIC for 5G base station in the 28 GHz band consumes input power of 200mW when a drain voltage of 10 V and a gate voltage of ?1.5 V are applied. In addition, it has the NF of 1.6-1.8 dB, the gain of 12.9-15.8 dB, the input return loss of > 12 dB, and the output return loss of > 15 dB in the 26-32 GHz band. |