| Title |
Analysis of Ferroelectric Tunnel Junction with Metal-ferroelectric-insulator-metal Structure Applying High-k Material as an Insulator Layer |
| Authors |
최문정(Munejeong Choe) ; 김상완(Sangwan Kim) |
| DOI |
https://doi.org/10.5573/ieie.2022.59.6.17 |
| Keywords |
Ferroelectric tunnel junction; HfO2-based ferroelectric film; High-k material; Low power operation; Tunneling electro-resistance |
| Abstract |
In this paper, a ferroelectric tunnel junction (FTJ) with metal-ferroelectric-insulator-metal (MFIM) structure using high-k material as an insulator layer is fabricated and analyzed for an enhanced tunneling electro-resistance (TER) ratio. The HfO2 (or ZrO2) and Hf0.5Zr0.5O2 are used for a high-k and a ferroelectric laye, respectively. As a result, the erase current is constant regardless of the insulator material, while the write current is proportional to the dielectric constant. It is attributed in part to the different band offsets between Hf0.5Zr0.5O2 and insulator layers, and in part to the difference of remnant polarization depending on the dielectric constant. Consequently, TER ratio is improved by 3.9 times and 2.2 times for ZrO2 and HfO2, respectively. |