| Title |
A Matrix Switch based on Back-To-Back Structure MOSFET with Small Change of On-resistance by Applying Variable Gate Voltage Circuit |
| Authors |
이나혁(Nahyeok Lee) ; 김성종(Seongjong Kim) |
| DOI |
https://doi.org/10.5573/ieie.2022.59.8.77 |
| Keywords |
MOSFET; On-resistance; Matrix switch; Back-To-Back structure; SPICE simulation |
| Abstract |
In an N-MOSFET, the on-resistance, which is an inherent internal resistance, is changed by the gate-source voltage. In N-MOSFETs connected in a back-to-back structure, the on-resistance is not always kept constant because the source voltage changes according to the input voltage. When the variable gate voltage circuit proposed in this paper is applied, the gate-source voltage is always kept constant because the gate voltage is adjusted according to the MOSFET source voltage. Therefore, the MOSFET performs a stable Turn-on/off operation. Through simulation, it was confirmed that the resistance value of the MOSFET switch in the turn-on state is about 4.02618mΩ, and in the turn-off state, the resistance value is at least 25MegΩ. A matrix switch was designed based on this MOSFET switch structure, and through simulation, the resistance value of each MOSFET switch was confirmed to be the same 4.02618mΩ regardless of the position(row/column) and the number of connections. And it was confirmed that the resistance value increases by about 0.1mΩ to 0.16mΩ each time the temperature increases by 10℃. |