| Title |
Improvement on Resistive Switching Uniformity of Synaptic Device with Bi-layer Structure for Future Defense AI Semiconductors |
| Authors |
염한(Han Yan) ; 안영진(Yeong-Jin An) ; 권혁민(Hyuk-Min Kwon) ; 순일바부이디(Sunil Babu Eadi) ; 이희덕(Hi-Deok Lee) |
| DOI |
https://doi.org/10.5573/ieie.2022.59.10.147 |
| Keywords |
Bi-layer structure; Synaptic device; Atomic layer deposition; Resistive switching; Al2O3/HfO2 |
| Abstract |
In this work, Al2O3 thickness effects on Al2O3/HfO2 based Bi-layer synaptic devices were studied. The Al2O3 thickness ranging from 3 nm to 10 nm was deposited by atomic layer deposition (ALD) on HfO2 (3 nm)/Pt/Ti/SiO2/Si substrates with Al top electrode, respectively. The forming voltage gradually increased while its uniformity improved as the Al2O3 thickness increases. It is observed that bi-layer (Al/Al2O3/HfO2/Pt) synaptic device with Al2O3 thickness of 5 nm has optimal performance with high on/off ratio from the cycle to cycle evaluation, and the resistance switching characteristics becomes relatively uniform than single layer (Al/HfO2/Pt) synaptic device. |