| Title |
ITO FET Sensor for Detection of Chloride Ions (Cl-) |
| Authors |
김대훈(Dae Hoon Kim) ; 송광섭(Kwang Soup Song) |
| DOI |
https://doi.org/10.5573/ieie.2022.59.11.111 |
| Keywords |
Chloride ions; Indium tin oxide; Ion sensitive field effect transistor; Ion selective membrane; Ion detection |
| Abstract |
A field effect transistor (FET) was fabricated on the indium tin oxide (ITO) thin film surface. The ion sensitive field-effect transistor (ISFET) sensor detecting of chloride ions (Cl-) was fabricated using the ITO-FET. In order to fabricate a high-sensitivity ion sensor, the ITO thin film was deposited using sputtering under the condition that the ratio of oxygen (O2) gas to argon (Ar) gas was 20 : 1. The ion selective membrane (ISM) for the detection of chloride ions was applied to the gate channel surface of the ITO-ISFET, and the detection of chloride ions was confirmed through evaluation of the FET characteristics of the ITO-ISFET. The sensitivity of the ITO-ISFET sensor was 69.53 mV/dec in the concentration range of chloride ions from 1 uM to 100 mM.. In addition, the ITO-ISFET sensor detected chloride ions in a buffer solution containing interference ions of potassium bromide (Kbr), potassium nitrate (KNO3), and potassium sulfate (K2SO4). And the ITO-ISFET sensor detected chloride ions even under the condition that the chloride ions concentration changes in real time. |