| Title |
An Improved Small-Signal Equivalent Circuit Parameter Extraction Method for Body Contact PD-SOI MOSFET with RF Inductive Effect |
| Authors |
김경준(Kyeongjun Kim) ; 이성현(Seonghearn Lee) |
| DOI |
https://doi.org/10.5573/ieie.2023.60.2.35 |
| Keywords |
SOI MOSFET; Silicon-on-insulator; RF inductive effect; Equivalent circuit; Parameter extraction |
| Abstract |
We propose an improved method of directly extracting RF inductive effect parameters using the slope or y-intercept of the linear regression line obtained by expressing Y-parameter equations derived from the output equivalent circuit of the body contact PD-SOI MOSFET with RF inductive effect as a frequency-related function. Since the conventional direct extraction method requires extreme values of ultra-high and ultra-low frequencies that cause errors, the extraction values become inaccurate depending on the selection of the measurement frequency range, so that a complex optimization process is essential. However, the improved extraction method has the advantage of being able to extract accurate values without optimization by using the linear regression line of the measurement data without limitations in the range of measurement frequencies. The accuracy of this improved method has been verified by confirming better agreement with the measured S-parameter data than the model using the conventional one. |