| Title |
A Study on ESD Protection Circuits using STACK Technology with High Holding Voltage and Bi-directional Characteristics for High Voltage Applications |
| Authors |
정승구(Seung-Gu Jeong) ; 권상욱(Sang-Wook Kwon) ; 이정민(Jeong-Min Lee) ; 백승환(Seung-Hwan Baek) ; 구용서(Yong-Seo Koo) |
| DOI |
https://doi.org/10.5573/ieie.2023.60.4.3 |
| Keywords |
High voltage; ESD; Latch-up; SCR; DDSCR |
| Abstract |
In this paper, an electrostatic discharge (ESD) protection circuit using stack technology with high holding voltage and bi-directional characteristics is proposed. The proposed ESD protection circuit has a high holding voltage by adding an N+ region and a gate on the N-well in the existing LTDDSCR structure. In addition, by applying Stack technology, it is expected to be suitable for high voltage applications due to high holding voltage characteristics and to provide excellent area efficiency due to bidirectional characteristics. |