| Title |
Design Methodology for Determination of Optimal Ion Implant Dose of EDNMOS ESD Protection Device with Extended Drain |
| DOI |
https://doi.org/10.5573/ieie.2023.60.10.21 |
| Keywords |
ESD; Double snapback; EDNMOS; Design methodology; 2D matrix combination |
| Abstract |
In this paper, an extended drain N-type MOSFET (EDNMOS) device with an extended drain was designed by process and device simulation to improve the electrostatic discharge (ESD) protection performance of an NMOS device operating at high voltage. A design methodology based on 2D matrix combination was used in order to determine the optimal background doping concentration that can prevent the double snapback phenomenon that has the greatest influence on stable ESD characteristics. In order to prevent the double snapback phenomenon, it is desirable to increase the background doping concentration so as not to form a deep channel, but rather the junction breakdown voltage decreases, so an appropriate design trade-off is required. Therefore, it was found that selecting the N- drift ion implantation dose as high as possible is the best method. |