| Title |
A Study on the Performance Comparison of Series?Parallel Switches and Series?Parallel Asymmetric Stacked Switches |
| Authors |
노희정(Hee-Jung Roh) ; 최학윤(Hak-Yun Choi) |
| DOI |
https://doi.org/10.5573/ieie.2023.60.10.78 |
| Keywords |
Series?parallel switch; Series?parallel asymmetric stacked switch; FET |
| Abstract |
In this paper, two types of switches operating in the 1GHz ~ 6GHz band were designed and their performance was analyzed and studied. The characteristics of the series?parallel asymmetric stacked switch were designed to have an asymmetric structure by additionally connecting two FETs in a stack structure only to the input-transmit terminal of the series?parallel switch. In the case of the series?parallel asymmetric stacked switch, the characteristics of the transmission path obtained an insertion loss of less than 1.5dB and an isolation degree of more than 25dB in the 1GHz∼6GHz band, and there was a decrease of about 1 to 3dB in the power side of the transmitting end, and the series-parallel switch had a 1dB reduction in the transmission path It has been studied that the series?parallel switch is excellent in terms of overall performance with less than 30dB of insertion loss, 30dB or more of isolation, and 0.24dB of power reduction. |