| Title |
A Ka-Band Low-noise Amplifier In FD-SOI Process |
| Authors |
이정로(Jungro Lee) ; 이승찬(Seungchan Lee) |
| DOI |
https://doi.org/10.5573/ieie.2024.61.10.48 |
| Keywords |
FD SOI; Low-noise amplifier; Body-biasing |
| Abstract |
This paper presents the design of a low-noise amplifier (LNA) operating in the Ka-Band using a 28-nm CMOS FD-SOI process. It consists of a differential common-source amplification stage and input/output impedance matching circuits. The cross-coupled capacitor technique is applied to the amplification stage to achieve stable operation and sufficient gain. To further improve the gain and noise figure, a body bias of 1.1 V is applied to adjust the threshold voltage. The fabricated LNA demonstrates a peak gain of 11.6 dB and a noise figure of 2.8 dB at 28 GHz, with a 3-dB bandwidth of 8 GHz. |