| Title |
Analysis of the Characteristics of Al2O3 Silane Formation |
| Authors |
김한별(Hanbyeol Kim) ; 김영곤(Younggon Kim) |
| DOI |
https://doi.org/10.5573/ieie.2024.61.10.57 |
| Keywords |
Semiconductor; Thermal emission; Aluminium oxide; Silane; Formation |
| Abstract |
With the development of the IT industry, semiconductor chips applied to smart devices are increasing in performance and miniaturization, and accordingly, they generate a lot of heat in the semiconductor chips. In the case of semiconductor chips, when exposed to heat for a long period of time, problems such as lifespan, performance degradation, and malfunction occur. Accordingly, there is a need for a TIM technology that efficiently dissipates heat generated by smart devices. Therefore, in this study, a silane was formed on the surface of Al2O3, a ceramic-based material, and surface analysis, component analysis, spectrum analysis, and thermal conductivity analysis were performed accordingly. As a result of surface analysis, it was confirmed that the surface was irregular after the formation of the silane, and as a result of component analysis, the component of element Si 22.70 wt% was confirmed. In addition, as a result of spectrum analysis, Si-O-Al peaks were confirmed around 557 cm-1 and 850 cm-1, and Si-O-Si peaks were confirmed around 1196 cm-1. Accordingly, it was found that an Si-O peak was formed according to the formation of Al2O3 silane. Si-O peak formation is smoothly dispersed when mixed with a silicon binder, and the heat conduction characteristics were analyzed. In the case of the mixture with the Si-O peak, it was confirmed that the 0.5W/mK heat conduction characteristics were increased compared to the mixture without formation. |