| Title |
Analysis of Gate-voltage Dependence of RF Inductive Effect Parameters in Equivalent Circuit for Floating Body PD-SOI MOSFETs |
| Authors |
조원기(Wongi Cho) ; 이성현(Seonghearn Lee) |
| DOI |
https://doi.org/10.5573/ieie.2024.61.11.164 |
| Keywords |
RF inductive effect; Equivalent circuit; SOI MOSFET; Voltage dependence; Parameter extraction |
| Abstract |
The dependence of the effective inductance and RF kink resistance on , which model RF inductive effect in floating body PD-SOI MOSFETs with , is physically analyzed for the first time after these parameters are directly extracted from the measured S-parameters. and decrease with increasing because is inversely proportional to the body transconductance and impact ionization conductance and is also inversely proportional to . Using physically induced equations, it is confirmed that the rise of at a higher occurs because the increase of is more prevalent than the decrease of the impact ionization multiplication factor in the short-channel device of , and the increase of at a higher is mainly caused by the increase of the transconductance and internal body voltage. The -dependence of and is verified by observing the increase in extracted and data when becomes higher using S-parameter optimization based on a physical equivalent circuit. |