| Title |
Displacement Damage Effect of Proton Irradiation on β-Ga2O3 Schottky Barrier Diode (SBD) |
| Authors |
김영조(Young Jo Kim) ; 김형우(Hyoung Woo Kim) ; 윤영준(Young Jun Yoon) ; 서재화(Jae Hwa Seo) |
| DOI |
https://doi.org/10.5573/ieie.2024.61.12.19 |
| Keywords |
Beta-gallium oxide; Proton irradiation; Vertical schottky barrier diode; Displacement damage |
| Abstract |
In this study, vertical Schottky barrier diode (SBD) based on the beta-gallium oxide (β-Ga2O3) were fabricated, and proton irradiation experiments were conducted to analyze their radiation hardness. The effects of proton radiation on the performance of the SBD were evaluated through measurements of current, capacitance, and breakdown voltage characteristics. After proton irradiation, the current and capacitance characteristics of the SBDs degraded as a result of displacement damage (DD). Additionally, the breakdown voltage increased due to an increase in resistance caused by displacement damage. |