| Title |
A Comparative Study between Thermal Tantalum Oxide and ALD-deposited Aluminum Oxide Gate Insulators in a-IGZO Thin-film Transistor |
| Authors |
유은성(Eun-Seong Yu) ; 황상호(Sang-Ho Hwang) ; 정아현(Ah-Hyun Jeong) ; 문승재(Seung-Jae Moon) ; 배병성(Byung Seong Bae) |
| DOI |
https://doi.org/10.5573/ieie.2025.62.1.36 |
| Keywords |
a-IGZO TFT; High-k; Tantalum oxide; Indium rich |
| Abstract |
In our investigation, we introduce a novel approach to fabricate a-IGZO thin-film transistors featuring a high-k gate insulator formed via thermal oxidation. This pioneering method promises to significantly enhance the electrical characteristics crucial for high-resolution displays and low-voltage operations. Notably, the thermal oxidation process presents distinct advantages including reduced costs and decreased surface contamination in contrast to vacuum deposition techniques. Our study focuses on the utilization of tantalum oxide as the gate insulator renowned for its high dielectric constant. The tantalum oxide a-IGZO thin-film transistors developed through this process demonstrate an impressive mobility of 25.7 cm²/V·s, representing a remarkable threefold improvement over their aluminum oxide counterparts. High mobility enables the development of high-density and high-speed display applications. |