| Title |
A W-band GaN Differential Oscillator With High Output Power |
| DOI |
https://doi.org/10.5573/ieie.2025.62.1.56 |
| Keywords |
W-band; Oscillator; GaN; MMIC; High-power |
| Abstract |
This paper presents a W-band (75-110 GHz) high-power oscillator in 60-nm GaN HEMT tehcnology. A common-source stage with a capacitive source feedback is employed for the oscillation core. The oscillator is designed in fully-differential topology including the core and buffer stage, thus enables a differential output without additional on-chip balun. The measured peak output power is 21.4 dBm at 88 GHz, while dissipating a DC power of 2688 mW. The oscillator exhibits a measured phase noise of ?74 dBc/Hz at 1-MHz offset. The chip size including probing pads is 1100x610 μm2. |