| Title |
Analysis of Program Characteristics in V-NAND with Varying Dimple Length |
| Authors |
김성우(Seongwoo Kim) ; 강명곤(Myounggon Kang) |
| DOI |
https://doi.org/10.5573/ieie.2025.62.6.9 |
| Abstract |
This paper analyzes the impact of convex and concave dimple structures formed during the channel hole etching process in V-NAND on device characteristics. Variations in dimple length lead to changes in the electric field (e-field) distribution and trap charge formation, which in turn affect program speed and disturbance characteristics during incremental step pulse programming (ISPP) operation. In the convex structure, increasing the dimple length results in stronger e-field concentration on the word line (WL), leading to increased trap charge and program disturbance. In contrast, the concave structure exhibits a tendency for the e-field to be dispersed into the spacer (SP), thereby mitigating disturbance. |