| Title |
An Improved Method for Small-Signal Equivalent Circuit Model Parameter Extraction of Body Contact PD-SOI MOSFETs |
| Authors |
조원기(Wongi Cho) ; 이성현(Seonghearn Lee) |
| DOI |
https://doi.org/10.5573/ieie.2025.62.10.15 |
| Keywords |
SOI MOSFET; Equivalent circuit; Parameter extraction; RF modeling; Direct extraction |
| Abstract |
An improved direct method has been introduced to extract a small-signal equivalent circuit model with low-frequency effects for body contact PD-SOI MOSFETs. Unlike previous studies that rely on complex curve-fitting or CAD optimization processes to extract junction capacitance, body resistance, and low-frequency effect parameters, this method significantly simplifies the extraction process by determining the slope and y-intercept from the linear regression lines of the Y-parameter function equations versus squared angular frequency derived from the model. The improved model's accuracy has been validated by confirming very good agreement with the measured S-parameters in the wide range of frequencies from 10 MHz to 20 GHz. |