| Title |
Critical Dimension Control in Photolithography and Etching Processes: Statistical Analysis and Gaussian Process Regression-based Optimization |
| Authors |
정유진(Yujin Jung) ; 김채린(Charin Kim) ; 최규철(Gyucheol Choi) ; 이승철(Seungcheol Lee) ; 이종욱(Jongwook Lee) |
| DOI |
https://doi.org/10.5573/ieie.2025.62.12.35 |
| Keywords |
Critical dimension; Photolithography; Etching process; Gaussian process regression; Semiconductor process optimization |
| Abstract |
In semiconductor manufacturing, the uniformity of the Critical Dimension(CD) is a key factor that directly affects the electrical characteristics of devices and production yield. This study proposes a novel integrated optimization methodology that takes into account the distinct CD control characteristics of both photolithography and etching processes. In the photolithography stage, CD control according to variables such as spin coating speed, exposure time, and develop time is optimized using regression analysis. In the etching process, Gaussian Process Regression (GPR) is introduced to quantify and optimize the nonlinear characteristics arising from the complex interactions among variables such as RF power, CF4 flow, and O2 flow. This integrated process control strategy enables the simultaneous optimization of ADI(After-Develop Inspection) CD and ACI(After-Etch Inspection) CD across the entire manufacturing process. |