| Title |
Improved Optimization Method for Small-Signal Off-State Equivalent Circuit Modeling of PD-SOI MOSFETs |
| Authors |
이승훈(Seunghun Yi) ; 이성현(Seonghearn Lee) |
| DOI |
https://doi.org/10.5573/ieie.2026.63.2.11 |
| Keywords |
SOI MOSFET; Equivalent circuit; Model; Parameter extraction; Optimization |
| Abstract |
An improved optimization method is proposed to physically extract all parameters of the small-signal off-state PD-SOI MOSFET equivalent circuit from the S-parameters measured at a single bias. This method reduces the number of unknown parameters by using the capacitance sum relational expressions, derived from the simplified equivalent circuit at low frequencies, as constraints in the optimization process. The physical validity of the extracted parameters is verified by the improved method compared to the conventional optimization method, and the extraction accuracy is further confirmed by comparing with the measured S-parameters. |