| Title |
Direct Extraction Method for Low-frequency Effect and RF Inductive Effect Parameters in Small-Signal Equivalent Circuit of Floating-body PD-SOI MOSFETs |
| Authors |
이승훈(Seunghun Yi) ; 이성현(Seonghearn Lee) |
| DOI |
https://doi.org/10.5573/ieie.2026.63.7.29 |
| Keywords |
SOI MOSFET; Modeling; Parameter extraction; Low-frequency effect; RF inductive effect |
| Abstract |
This paper proposes a novel extraction method using linear regression lines derived from the frequency-dependent equations of intrinsic output conductance () and capacitance () to accurately and separately extract the low-frequency (LF) effect and RF inductive effect parameters from the small-signal equivalent circuit of floating-body PD-SOI MOSFETs at a single bias point, where both effects coexist at low frequencies under high and conditions. The proposed method first extracts the RF inductive parameters using an approximated equation in which the LF effect is neglected, and then extracts the LF effect parameters using the derived equation, thereby enabling reliable separation of the two effects. In addition, the extraction errors introduced by the proposed method are analyzed and the required minimum and maximum frequency conditions for accurate separate extraction are presented. The accuracy of the proposed extraction method is verified by comparing measured and modeled S-parameters, and over the frequency range from 10 MHz to 20 GHz. |