| Title |
Low-Power Tri-Layer Synaptic Device with Filament Control by Al2O3 Insertion |
| Authors |
김유빈(Yu-Bin Kim) ; 김성호(Sung-Ho Kim) ; 김동민(Dong-Min Kim) ; 이희덕(Hi-Deok Lee) |
| DOI |
https://doi.org/10.5573/ieie.2026.63.8.15 |
| Keywords |
Synaptic device; Low-power device; Tri-layer structure; Fowler?nordheim tunneling |
| Abstract |
Low-power operation and stable control of conductive filaments are essential for neuromorphic devices. In this study, an HfO2/ZnO/Al2O3 tri-layer structure was introduced, and the electrical characteristics were analyzed according to the thickness of the Al2O3 insertion layer (1 nm and 2 nm). The tri-layer device incorporating a 1 nm-thick Al2O3 insertion layer exhibited Fowler?Nordheim (F?N) tunneling behavior in the high electric field region, achieving a low SET power of 300 μW and RESET power of 1.31 mW, which were significantly lower than those of the other structures. In contrast, the device with a 2 nm-thick Al2O3 insertion layer showed increased operating voltage and power consumption due to enhanced internal filament formation. Furthermore, the 1 nm insertion-layer device demonstrated reduced variation in forming and SET voltages as well as stable retention characteristics. LTP and LTD measurements confirmed gradual conductance modulation suitable for synaptic operation. These results suggest that an optimized Al2O3 insertion layer thickness contributes to the realization of low-power and highly reliable neuromorphic devices. |