| Title |
Effects of a Shallow Trench Between Pixels on the Electrical and Photoresponse Characteristics of a SiPM |
| Authors |
원종일(Jongil Won) ; 정동윤(Dongyun Jung) ; 박건식(Kunsik Park) |
| DOI |
https://doi.org/10.5573/ieie.2026.63.10.17 |
| Keywords |
Silicon photo-multiplier; Shallow trench; Quenching resistance; photo-electron resolution; Over-voltage |
| Abstract |
This paper investigates the electrical and photo-response characteristics of a silicon photo-multiplier (SiPM) incorporating a shallow trench between adjacent pixels. The trench-induced deformation of the poly-silicon layer increased the quenching resistance (Rq), thereby extending the stable operating range beyond breakdown. Photo-response measurements at 660 nm further showed that the separation between adjacent photo-electron peaks was improved by approximately 37.1%. These results demonstrate that the shallow trench is effective in enhancing both quenching stability and photo-electron resolution in SiPMs. |