| Title |
Graphene-ITO pn junction photodetector |
| Authors |
유재선(Jae Sun You) ; 송광섭(Kwang Soup Song) |
| DOI |
https://doi.org/10.5573/ieie.2026.63.10.45 |
| Keywords |
Carbon; Graphene; ITO; pn junction; Photodetector |
| Abstract |
In this study, a partially fluorinated p-type graphene was fabricated through surface treatment using fluorobenzene. An n-type ITO was then deposited on the p-type graphene by RF sputtering to form a pn-junction photodetector. The metal masks were used to deposit the ITO onto the p-type graphene surface in grid patterns of 200 and 500 um, as well as with a 5:5 area ratio. An LED light source with a wavelength of 468 nm was used, and a bias voltage ranging from ?5 V to 5 V was applied. As the intensity of the LED light source increased, the photocurrent of the pn-junction photodetector increased regardless of the ITO deposition pattern, while the dark current varied depending on the ITO pattern. The dark current of the pn-junction photodetector with a 200 μm grid-patterned ITO electrode was ?1.07×10?? A, while that of the unpatterned device with a 5:5 ITO-to-graphene area ratio was ?2.00×10?? A. The dark current of the photodetector with the 200 μm patterned ITO was reduced by 120 fold compared to the photodetector with a 5:5 structure. |