| Title |
A Study on the TFT Fabrication Using Anodized Aluminium Oxide Film |
| Abstract |
One of the stable thin film transistor fabricated by cadmium suifide with the anodized aluminium oxide as gate material. The principle of the operation for the device is based on the control mechanism of injected majority carricrs to the wide band gap semiconductor, that is cadmium sulfide, by means of the function of the gate control. The fabricated device constructed by evaporating CdS layer in the form of microcrystalline on the oxided thin film characterized by ea, 80 as voltage amplification factor, 1/100 mho as transconductance, 8 kohm as dynamic output resistance, furthermore gain band width products is about 15 MHz. |