| Title |
The Parameters Extraction in Poly TFT Using Optimization Technique |
| Abstract |
We used Cd Se as the semiconductor to analyze the Poly-TFT. Cd Se TFT is fabricated by the vacuum evaporation method and the characteristics curves of the current-voltage are obtained using the results of measurement of Cd Se TFT devices. Employing least square method and Rosenbrock algorithm, we can extract the device parameters(grain boundary mobility, trap density). The current-voltage relations calculated by extracted parameters are in good agreement with experimental results. |