| Title |
Effect of Excess ZnO on Microwave Dielectric Characteristics of Ba({Zn}_{1/3}{Ta}_{2/3})O_3 Ceramics |
| Keywords |
유전체공진기 ; 유전율 ; 고주파유전특성 ; Post Resonator 법 ; Resonant Cavity법 Dielectric Resonator ; Quality Factor(Q) ; Dielectric Constant ; Microwave Dielectric Characteristics |
| Abstract |
Dielectric properties of Ba(ZnS11/3TTaS12/3T)OS13T+x ZnO(x=0, 0.4, 0.8, 1.0 wt%) ceramics have been investigated at microwave frequencies. With excess ZnO, the sinterability was improved and the dielectric constant(εS1rT) and the unloaded quality factor(QS1UT) were increased. The structure changed into hexagonal from pseudocubic as being annealed at 1400°C in excess ZnO composition. Also, the temperature coefficient of the resonant frequency (τS1fT) turned into (-)ppm/°C when sintered at 1550°C for 2 hours. But the specimen sintered in ZnO muffling showed increased density and εS1rT but lowerde QS1uT. Among the specimen investigated, expecially the composition added with 0.4wt% excess ZnO showed the most optimum dielectric values (εS1rT=28, QS1uT x f=120000GHz) better than those of original Ba(ZnS11/2T TaS12/3T)OS13T ceramics. |