KIEE - The Transactions of the Korean Institute of Electrical Engineers

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The Transactions of the Korean Institute of Electrical Engineers

The Transactions of the Korean Institute of Electrical Engineers

ISO Journal TitleTrans. Korean. Inst. Elect. Eng.

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Title	Mathematical Modeling of Hysteresis Characteristics of a-Si:H TFT
Authors	Lee, Woo-Sun(Lee, Woo-Sun) ; Kim, Byung-In(Kim, Byung-In)
Page	pp.1135-1143
ISSN	1975-8359
Abstract	We fabricate a bottom gate a-Si:H TFT on N-Type <100> Si wafer. According to the Variation of gate and drain voltage, the hysteresis characteristic curves were measured experimentally. Also, we proposed model equation and showed that the model predict the hysteresis characteristic successfully. Drain current on the hysteresis characteristic curve showed an exponential variation. Hysteresis area of TFT increased with the drain voltage increase and decreases with the drain voltage decrease.

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