| Title |
Resist characteristics and molecular structure control of polystyrene by plasma polymerization method |
| Authors |
박종관 ; 김영봉 ; 김보열 ; 임응춘 ; 이덕출 |
| Keywords |
Plasma Polymerization ; Organic thin film ; E-beam resist ; Etching resistance |
| Abstract |
The effect of plasma polymerization conditions on the structure of the plasma polymerized styrene were investigated by using Fourier Transform Infrared Ray(FT-IR), Differential Scanning Calorimetry (DSC), Gel Permeation Chromatography(GPC). Plasma polymerized thin film was prepared using an interelectrode inductively coupled gas-flow-type reactor. We show that polymerization parameters of thin film affect sensitivity and etching resistance of plasma polymerized styrene is 1.41~3.93, and deposition rate of that are 32~383[.angs./min] with discharge power. Swelling and etching resistance becomes more improved with increasing discharge power during plasma polymerization. (author). 11 refs., 10 figs., 1 tab. |