| Title |
Two-Dimensional Device Simulator TFT2DS for Hydrogenated Amorphous Silicon Thin Film Transistors |
| Authors |
최종선(Choe, Jong-Seon) ; Neudeck, Gerold W.(Neudeck, Gerold W.) |
| Keywords |
Amorphous Silicon ; Thin Film Transistor ; Numerical Analysis ; Device Simulator ; Parameter Sensitivity ; Transient Analysis ; Transfer Characteristics ; Field Effect Mobility ; Parasitic Resistance |
| Abstract |
Hyrdogenated amorphous silicon thin film transistors are used as a pixel switching device of TFT-LCDs and very active research works on a-Si:H TFTs are in progress. Further development of the technology based on a-Si:H TFTs depends on the increased understanding of the device physics and the ability to accurately simulate the characteristics of them. A two-dimensional device simulator based on the realistic and flexible physical models can guide the device designs and their optimizations. A non-uniform finite-difference TFT Simulation Program, TFT2DS has been developed to solve the electronic transport equations for a-Si:H TFTs. In TFT2DS, many of the simplifying assumptions are removed. The developed simulator was used to calculate the transfer and output characteristics of a-Si:H TFTs. The measured data were compared with the simulated ones for verifying the validity of TFT2DS. Also the transient behaviors of a-Si:H TFTs were calculated even if the values of the related parameters are not accurately specified. |