• 대한전기학회
Mobile QR Code QR CODE : The Transactions of the Korean Institute of Electrical Engineers
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  • 한국과학기술단체총연합회
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Title Design and Fabrication of a High Speed Blocking Device of Transient Overvoltages for info-communication Facilities
Authors 길경석(Gil, Gyeong-Seok)
Page pp.51-56
ISSN 1975-8359
Keywords Transient Overvoltage Blocking Device(TOBD) ; Remnant Voltage ; Active Non-linear Element ; Clamping Voltage ; Limiting Current
Abstract This paper presents a new transient overvoltage blocking device (TOBD) for info-communication facilities with low power and high frequency bandwidth. Conventional protection devices have some problems such as low frequency bandwidth, low energy capacity and high remnant voltage. In order to improve these limitations, thehybrid type TOBD, which consists of a gas tube, avalanche diodes and junction typefield effect transistors (JFETs), was designed and fabricated. The TOBD differs from the conventional protection devices in configuration, and JFETs were used as an active non-linear element and a high speed switching diode with low capacitance limits high current. Therefore the avalanche dilde with low energy capacity are protected fromthe high current, and the TOBD has a very small input capacitance. From the performance test using combination surge generator, which can produce 1.2/50μs 4.2kV_{max} 8/20μs 2.1kA_{max}, it is confirmed that proposed TOBD has an excellent protection performance in tight clamping voltage and limiting current characteristics.