| Title |
A Study on Hydrogen Detection Characteristics of the Pt-MIS Capacitor Device |
| Authors |
성영권(Sung, Yung-Kwon) ; 이승환(Yi, Seung-Hwan) ; 고중혁(Koh, Jung-Hyuk) ; 이동희(Rhie, Dong-Hee) |
| Keywords |
촉매금속 ; MIS 커패시터 가스센서 ; 쌍극자층 ; 흡착위 ; 분극현상 ; 평탄밴드전압변화 ; C-V곡선 catalytic metal ; MIS capacitor gas sensor ; dipole layer ; adsorption site ; polarization phenomena ; flatband voltage shift ; C-V curve |
| Abstract |
The characteristics of H_2 gas detection have been investigated using the Pt-MIS capacitor composed of the LPCVD nitride on the oxide. The flat band voltage shift is measured as 0.1 V in 1,000 ppm H_2 gas ambient and to be independent of Pt catalyst thickness. It is found that the flatband voltage shift is proportional to the hydrogen concentrations. The response and recovery time of Pt-MIS capacitor are 5 mins and 25 mins respectively. The samples of 30nm thick Pt revealed much higher sensitivity than that of 150nm samples. The samples of 150nm Pt showed that the flatband voltage shift of the device is due to the formation of the dipole layer of the adsorbed hydrogen atoms at the Pt-insulator interface. |