| Title |
Characteristics of single/poly crystalline silicon etching byAr^+ ion laser for MEMS applications |
| Authors |
이현기(Lee, Hyun-Ki) ; 한승오(Han, Seung-Oh) ; 박정호(Park, Jung-Ho) ; 이천(Lee, Cheon) |
| Keywords |
MEMS ; 3D micromachining ; Laser direct etching ; Silicon |
| Abstract |
In this study, Ar^+ ion laser etching process of single/poly-crystalline Si with CCl_2F_2 gas is investigated for MEMS applications. In general, laser direct etching process is useful in microelectronic process, fabrication of micro sensors and actuators, rapid prototyping, and complementary processing because of the advantages of 3D micromachining, local etching/deposition process, and maskless process with high resolution. In this study, a pyrolytic method, in which CCl_2F_2 gasetches molten Si by the focused laser, was used. In order to analyze the temperature profile of Si by the focused laser, the 3D heat conduction equation was analytically solved. In order to investigate the process parameters dependence of etching characteristics, laser power, CCl_2F_2 gas pressure, and scanning speed were varied and the experimental results were observed by SEM. The aspect ratio was measured in multiple scanning and the simple 3D structure was fabricated. In addition, the etching characteristics of 6μm thick poly-crystalline Si on the insulator was investigated to obtain flat bottom and vertical side wall for MEMS applications. |