| Title |
Decrease of Gate Leakage Current by Employing AI Sacrificial Layer in the DLC-coated Si-tip FEA Fabrication |
| Authors |
주병권(Ju, Byeong-Kwon) ; 이상조(Lee, Sangjo) ; 김훈(Kim, Hoon) ; 이윤희(Lee, Yun-Hi) ; 오명환(Oh, Myung-Hwan) |
| Keywords |
Si-tip field emitter ; DLC ; gate-leakage current ; sacrificial layer ; field emission ; field emission display |
| Abstract |
DLC film remaining on device surface could be removed by eliminating AI sacrificial layer as a final step of lift-off process in the fabrication of DLC-coated Si-tip FEA. The field emission properties(I-V curves, hysteresis, and current fluctuation etc.) of the processed device were analyzed and the process was employed to 1.76 inch-sized FEA panel fabrication in order to evaluate its FED applicability. |