| Title |
Dry Etching Characteristics of GaN using a Planar Inductively Coupled CHsub CH_4/H_2/Ar Plasma |
| Authors |
김문영(Kim, Mun-Yeong) ; 백영식(Baek, Yeong-Sik) ; 태흥식(Tae, Heung-Sik) ; 이용현(Lee, Yong-Hyeon) ; 이정희(Lee, Jeong-Hui) ; 이호준(Lee, Ho-Jun) |
| Keywords |
a planar inductively coupled CH_4/H_2/Arplasma ; dry etching ; GaN ; etch rate ; roughness |
| Abstract |
A planar inductively coupled CH_4/H_2/Arplasma was used to investigate dry etch characteristics of GaN as a function of input power, RF bias power, and etch gas composition. Etch rate of GaN increased with input power up to 600 W and was saturated at the higher power. Also, the etch rates increased with increasing RF bias power, composition of CH_4 and Ar gas. We achieved the maximum etch rate of 930{ AA}/min at the input power 400 W, RF bias power 250 W, and operational pressure 10 mTorr. This paper shows that smooth etched surface having roughness less than 1 nm in rms can be obtained by using planar inductively coupled plasma with CH_4/H_2/Ar plasma ; dry etching ; GaN ; etch rate ; roughness |