| Title |
Passivation Effects of Excimer-Laser-Induced Fluorine using SiO_{x}F_{y} Pad Layer on Electrical Characteristics and Stability of Poly-Si TFTs |
| Authors |
김천홍(Kim, Cheon-Hong) ; 전재홍(Jeon, Jae-Hong) ; 유준석(Yu, Jun-Seok) ; 한민구(Han, Min-Gu) |
| Keywords |
polycrystalline silicon ; thin film transistor ; SiO_{x}F_{y}/a-Si ; stability ; fluorine passivation ; excimer laser annealing |
| Abstract |
We report a new in-situ fluorine passivation method without in implantation by employing excimer laser annealing of SiO_{x}F_{y}/a-Si structure and its effects on p-channel poly-Si TFTs. The proposed method doesn't require any additional annealing step and is a low temperature process because fluorine passivation is simultaneous with excimer-laser-induced crystallization. A in-situ fluorine passivation by the proposed method was verified form XPS analysis and conductivity measurement. From experimental results, it has been shown that the proposed method is effective to improve the electrical characteristics, specially field-effect mobility, and the electrical stability of p-channel poly-Si TFTs. The improvement id due to fluorine passivation, which reduces the trap state density and forms the strong Si-F bonds in poly-Si channel and SiO_2/poly-Si interface. From these results, the high performance poly-Si TFTs canbe obtained by employing the excimer-laser-induced fluorine passivation method. |