| Title |
UV Emission Characterization of ZnO Thin Films Depending on the Variation of Oxygen Pressure |
| Authors |
백상혁(Baek, Sang-Hyeok) ; 이상열(Lee, Sang-Yeol) ; 진범준(Jin, Beom-Jun) ; 임성일(Im, Seong-Il) |
| Keywords |
ZnO ; UV ; emission ; photoluminescence ; pulsed laser deposition |
| Abstract |
ZnO is a wide-bandgap II-IV semiconductor and has a variety of potnetial applications. ZnO exhibits good piezoelectric, photoelectric and optical properties, and is a good candidate for an electroluminescence device. ZnO films have been deposited on (001) sapphire by PLD technique. Nd:YAG pulsed laser was operated at a wavelength of Λ=355nm. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from 200°C to 700°C films showed strong UV emission by increasing the partial oxygen pressure. We have investigated the relationship between partial oxygen pressure and the intensity of UV emission. |