| Title |
A New Snap-back Suppressed SA-LIGBT with Gradual Hole Injection |
| Authors |
전정훈(Jeon, Jeong-Hun) ; 이병훈(Lee, Byeong-Hun) ; 변대석(Byeon, Dae-Seok) ; 이원오(Lee, Won-O) ; 한민구(Han, Min-Gu) ; 최열익(Choe, Yeol-Ik) |
| Keywords |
Gradual injection ; lateral insulated gate bipolar transistor ; dual-gate ; SA-LIGBT ; snapback |
| Abstract |
The gradual hole injection LIGBT (GI-LIGBT) which employs the dual gate and the p+ injector, was fabricated for eliminating a negative resistance regime and reducing a forward voltage drop in SA-LIGBT. The elimination of the negative resistance regime is successfully achieved by initiating the hole injection gradually. Furthermore, the experimental results show that the forward voltage drop of GI-LIGBT decreases by lV at the current density of 200 A/cm^2 , when compared with that of the conventional SA-LIGBT. It is also found that the improvement in the on-state characteristics can be obtained without sacrificing the inherent fast switching characteristics of SA-LIGBT. |